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Characterization of Carbon-Contaminated B4C-Coated Optics after Chemically Selective Cleaning with Low-Pressure RF Plasma

机译:碳纳米管涂覆B4C涂层光学元件的表征   用低压射频等离子体进行化学选择性清洗

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摘要

Boron carbide (B4C) is one of the few materials that is expected to be mostlyresilient with respect to the extremely high brilliance of the photon beamgenerated by free electron lasers (FELs) and is thus of considerable interestfor optical applications in this field. However, as in the case of many otheroptics operated at modern light source facilities, B4C-coated optics aresubject to ubiquitous carbon contaminations. These contaminations represent aserious issue for the operation of high performance FEL beamlines due to severereduction of photon flux, beam coherence, creation of destructive interference,and scattering losses. A variety of B4C cleaning technologies were developed atdifferent laboratories with varying success. We present a study regarding thelow-pressure RF plasma cleaning of carbon contaminated B4C test samples viainductively coupled O2/Ar, H2/Ar, and pure O2 RF plasma produced followingprevious studies using the same IBSS GV10x downstream plasma source. Resultsregarding the chemistry, morphology as well as other aspects of the B4C opticalcoating before and after the plasma cleaning are reported. We conclude fromthese comparative plasma processes that pure O2 feedstock plasma only exhibitsthe required chemical selectivity for maintaining the integrity of the B4Coptical coating.
机译:碳化硼(B4C)是相对于由自由电子激光器(FEL)产生的光子束极高的光亮度预期被认为具有最大弹性的少数材料之一,因此在该领域的光学应用中引起了极大的兴趣。但是,就像在现代光源设备上运行的许多其他光学器件一样,涂有B4C的光学器件易受普遍存在的碳污染的影响。由于严重降低了光子通量,束的相干性,产生了破坏性的干涉以及散射损耗,这些污染物对高性能FEL光束线的操作提出了严重的问题。在不同的实验室开发了多种B4C清洁技术,并取得了不同的成功。我们通过先前的研究,使用相同的IBSS GV10x下游等离子体源,通过电感耦合的O2 / Ar,H2 / Ar和纯O2 RF等离子体,对碳污染的B4C测试样品进行低压RF等离子体清洁进行了研究。报告了在等离子清洗前后B4C光学涂层的化学,形态及其他方面的结果。我们从这些比较的等离子体工艺中得出结论,纯O2原料等离子体仅表现出维持B4C光学涂层完整性所需的化学选择性。

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